National Item Identification Number
00-434-9313
004349313
5961-00-434-9313
5961004349313
National Stock Number
Item Name
TRANSISTOR
Federal Supply Class
5961
Referenced on: http://radiotestsets.tpub.com//TM-11-6625-2857-24P/TM-11-6625-2857-24P0011.htm
Referenced on: http://radiotestsets.tpub.com//TM-11-6625-2857-24P/TM-11-6625-2857-24P0014.htm
Referenced on: http://radiotestsets.tpub.com//TM-11-6625-2857-24P/TM-11-6625-2857-24P0017.htm
Referenced on: http://radiotestsets.tpub.com//TM-11-6625-2857-24P/TM-11-6625-2857-24P0030.htm
Referenced on: http://www.tpub.com/content/signalgen/TM-11-6625-2955-24P/TM-11-6625-2955-24P0039.htm
Referenced on: http://www.tpub.com/content/signalgen/TM-11-6625-2955-24P/TM-11-6625-2955-24P0067.htm
Referenced on: http://www.tpub.com/content/signalgen/TM-9-4931-491-34P/css/TM-9-4931-491-34P_17.htm
Referenced on: http://www.tpub.com/content/signalgen/TM-9-4931-491-34P/css/TM-9-4931-491-34P_24.htm
Referenced on: http://www.tpub.com/content/signalgen/TM-9-5985-315-34P/TM-9-5985-315-34P0008.htm
Referenced on: http://www.tpub.com/content/signalgen/TM-9-5985-315-34P/TM-9-5985-315-34P0014.htmDescription
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Commercial and Government Entity Code (Supplier Data)
K0668
65597
1LQK8
AGILENT TECHNOLOGIES INC
DIV AGILENT BUSINESS CENTER
9780 S MERIDIAN BLVD
ENGLEWOOD
CO
80112
800-829-4444
28480
04713
27622
BURNS AND TOWNE INC
18-36 GRANITE ST
HAVERHILL
MA
01830
NSN (National Stock Number) 5961-00-434-9313, 5961004349313 NIIN (National Identification Number) 00-434-9313, 004349313
Part Numbers (Reference Numbers)
RELEASE5539
007-T-0187-01
106036-000000
134565-0000
1854-0392
1854-0392
2N
Required Categories
SEMICONDUCTOR MATERIAL
INTERNAL CONFIGURATION
VOLTAGE RATING IN VOLTS PER CHAR
Required Description
SILICON
JUNCTION CONTACT
35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EM